A nanoscopic near-infrared laser has been constructed by scientists at Yokohama National University, Japan. The device produces a stable, continuous streams of NIR laser light but is just several micrometers across. The active laser component is just nanometers in size and uses a microwatt of power. The nanolaser could be used in future miniaturized optoelectronic circuits or in lab-on-a-chip devices incorporating NIR spectroscopy. The team used the semiconductor gallium indium arsenide phosphate (GaInAsP) to build their laser based on the principles of photonic-crystal laser technology outlined by researchers at California Institute of Technology in 1999.
Nano laser near