Inorganic Materials (v.46, #13)

Advanced inorganic materials for hard magnetic media by Yu. V. Gulyaev; A. N. Kalinkin; A. Yu. Mityagin; B. V. Khlopov (1403-1420).
A review of magnetic materials used in modern hard magnetic media is presented. Advanced materials and technologies, along with conventional ones, are described. The capabilities and prospects of further development of data recording and storage systems are discussed.

New ferromagnetics based on manganese-alloyed chalcopyrites AIIBIVC 2 V by V. M. Novotortsev; A. V. Kochura; S. F. Marenkin (1421-1436).
This review describes the principles of semiconductor spintronics, represents the physicochemical properties of materials based on manganese-alloyed AIIBIVC 2 V compounds, considers the results from theoretical simulation of magnetic properties of AIIBIVC 2 V alloyed with 3d metals, summarizes the basic approaches to explanation of ferromagnetism with Curie points above room temperature arising in AIIBIVC 2 V :Mn, and indicates promising ways to synthesize and study magnetic semiconductors based on chalcopyrites AIIBIVC 2 V in order to produce a suitable material for spintronic devices.

Materials science perspectives for oxide ferromagnetic semiconductors by G. D. Nipan; V. A. Ketsko; A. I. Stognij; N. T. Kuznetsov (1437-1458).
The prospects for the development of the materials science of oxide semiconductors maintaining a spin orientation of the charge carriers above room temperatures are considered. The problems that need to be solved upon the transition from synthesized macroceramics to microelements of spin electronics are analyzed.

Synthesis of volatile inorganic hydrides by electrochemical method by V. V. Turygin; A. P. Tomilov; M. Yu. Berezkin; V. A. Fedorov (1459-1478).
Published data and results of our investigations on the problem of electrochemical synthesis of arsenic, phosphorus, and germanium hydrides are generalized. The results of the developments of the physicochemical bases of arsine synthesis by electrochemical reduction of arsenic acid, phosphine by reduction of white phosphorus in organic solvents, and monogermane by reduction of germanate in basic conditions are reported. The current yield of hydrides is 95, 90, and 40%, respectively. The promising guidelines of the practical use of electrochemical methods of the synthesis of the hydrides in the manufacture of semiconductor materials for microelectronics, optics, and laser engineering are discussed. The development of an arsine generator attracts considerable interest, which can serve as a basis for an aggregative continuous apparatus used in complex flow charts of manufacture of semiconductor materials.